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TPCP8105 Datasheet - Toshiba Semiconductor

TPCP8105 MOSFETs

TPCP8105 Features

* (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8:

TPCP8105 Datasheet (226.37 KB)

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Datasheet Details

Part number:

TPCP8105

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

226.37 KB

Description:

Mosfets.

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TPCP8105 MOSFETs Toshiba Semiconductor

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