TPCP8105 - MOSFETs

Toshiba Semiconductor

Datasheet Details

Part number	TPCP8105
Manufacturer	Toshiba ↗ Semiconductor
File Size	226.37 KB
Description	MOSFETs
Datasheet	TPCP8105-ToshibaSemiconductor.pdf

(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain PS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipati.

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Published: Aug 27, 2014 |