* (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8:
TPCP8105 Datasheet (226.37 KB)
TPCP8105
Toshiba ↗ Semiconductor
226.37 KB
Mosfets.
TPCP8105 MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8105 1. Applications Lithium-Ion Secondary Batteries Power Manageme.
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