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TPCP8109 Datasheet - Toshiba Semiconductor

Silicon P-Channel MOSFET

TPCP8109 Features

* (1) AEC-Q101 qualifed (2) Small, thin package (3) Small gate charge: QSW = 5.8 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 40.3 mΩ (typ.) (VGS = -10 V) (5) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA) 3. Packaging

TPCP8109 Datasheet (256.32 KB)

Preview of TPCP8109 PDF

Datasheet Details

Part number:

TPCP8109

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

256.32 KB

Description:

Silicon p-channel mosfet.

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TPCP8109 Silicon P-Channel MOSFET Toshiba Semiconductor

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