TPCP8106 Datasheet, Mosfets, Toshiba Semiconductor

Mosfets

TPCP8106

Toshiba ↗ Semiconductor

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Mosfets.
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(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 25 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (m

Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features (1) (2) (3) (4) Sm

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TAGS

TPCP8106 MOSFETs Toshiba Semiconductor