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2N3903 - Silicon NPN Transistor

Features

  • . Low Leakage Current : ICEV=50nA(Max. ), I BEV =-50nA(Max. @ V C E=30V, VB E=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : VcE(sat)=0.3V(Max. ) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance : C ob=4pF(Max. ) @ V C B=5V . Complementary to 2N3905 ' Unit in mm 1.

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Full PDF Text Transcription

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3903 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES . Low Leakage Current : ICEV=50nA(Max.), I BEV =-50nA(Max. @ V C E=30V, VB E=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : VcE(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance : C ob=4pF(Max.) @ V C B=5V . Complementary to 2N3905 ' Unit in mm 1. EMITTER 2. BASE 3. COLLECTOR flAXIMUn RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 60 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO 6 Collector Current ic 200 Base Current IB 50 Collector Power Dissipation 350 (Ta=25°C) Derate Linearly 25°C PC 2.
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