* . High Transition Frequency; fT = 200MHz (TYP.) . Low Output Capacitance; Cob = 3.5 pF (Typ.) . Low Saturation Voltage; VC E(sat) = -0.3V (Max.) at Ic = -100mA , I B = -10mA . Complementary to 2SC594 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitt
2SA594
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Silicon pnp transistor.
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS VIDEO AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. Unit.
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