Part number:
2SC2178
Manufacturer:
File Size:
65.45 KB
Description:
Silicon npn transistor.
* : . Output Power : P =15W (Min.) ( f=175MHz, VCC =12.5V, Pi=1.3W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=15V, Pi=1.3W, f=175MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collecto
2SC2178
65.45 KB
Silicon npn transistor.
📁 Related Datasheet
2SC2173 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN EPITAXIAL PLANAR TYPE
V
A
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =25W(Min.)
(f=470MHz, VCC=12.6V, Pi=10W).
2SC2101 - Silicon NPN POWER TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P =6W (Min.)
( f=175MHz, VCC=12.5V, Pi=0.5W )
Un.
2SC2101 - Silicon NPN POWER TRANSISTOR
(HGSemi)
H G Semiconductors
HG RF POWER TRANSISTOR
2SC2101
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Note : Above parameters , ratings , limits and condit.
2SC2102 - SILICON NPN TRANSISTOR
(Toshiba)
1
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : Po=15W (Min.)
( f=l 75MHz, Vcc=12.5V, Pi=1.3W).
2SC2103A - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : P =27W (Min.)
(f=175MHz, VC C=12.5V, Pi=4.2W ) 1.
2SC2104 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P G =3W(Min.)
(f=470MHz, V C c=12.6V, Pi=0.4W) ..
2SC2105 - SILICON NPN TRANSISTOR
(Toshiba)
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =6W(Min.)
(f =4 70MHz, V C c=12.6V, P 1 =1W) . 1.
2SC2106 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =12W(Min.)
(f=470MHz, VCC=12.6V, Pi=3W) . 100%.
