Datasheet4U.com

2SD880 - Silicon NPN Transistor

Toshiba

📥 Download Datasheet

2SD880 Datasheet Preview — Preview of 2SD880 PDF

datasheet Preview Page 2

Datasheet Details

Part number	2SD880
Manufacturer	Toshiba ↗
File Size	92.88 KB
Description	Silicon NPN Transistor
Datasheet	2SD880-Toshiba.pdf

2SD880 Product details

Features

: . High DC Current Gain : hEE =300(Max. )(VCE =5V, Ic=0.5A) . Low Saturation Voltage : VCE ( sat )=1.0V(Max. )(IC=3A, Ifi=0.3A) . High Power Dissipation : PC =30W (Tc=25°C) ; Complementary to 2SB834. Unit in mm 10.3MAX. 03.6iO2.

📁 2SD880 Similar Datasheet

2SD880-GR - NPN Silicon Power Transistors (MCC)
2SD880-Q - NPN Silicon Power Transistors (MCC)
2SD880-Y - NPN Silicon Power Transistors (MCC)
2SD880G - NPN Transistor (UTC)
2SD880Y - SILICON PLASTIC POWER TRANSISTOR (USHA)
2SD882 - NPN Silicon Power Transistor (NEC)
2SD882-GR - NPN Silicon Plastic-Encapsulate Transistor (MCC)
2SD882-HF - NPN Transistors (Kexin)

Other Datasheets by Toshiba

2SD811 - Silicon NPN Transistor
2SD818 - NPN Transistor
2SD819 - NPN Transistor
2SD820 - NPN Transistor
2SD821 - NPN Transistor
2SD822 - Silicon NPN Transistor

Published: May 30, 2024 |