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2SD880 - Silicon NPN Transistor

Datasheet Summary

Features

  • : . High DC Current Gain : hEE =300(Max. )(VCE =5V, Ic=0.5A) . Low Saturation Voltage : VCE ( sat )=1.0V(Max. )(IC=3A, Ifi=0.3A) . High Power Dissipation : PC =30W (Tc=25°C) ; Complementary to 2SB834. Unit in mm 10.3MAX. 03.6iO2.

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Datasheet Details

Part number 2SD880
Manufacturer Toshiba
File Size 92.88 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD880 Datasheet
Additional preview pages of the 2SD880 datasheet.

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SILICON NPN TRIPLE DIFFUSED TYPE 2SD880 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES : . High DC Current Gain : hEE =300(Max. )(VCE =5V, Ic=0.5A) . Low Saturation Voltage : VCE ( sat )=1.0V(Max.)(IC=3A, Ifi=0.3A) . High Power Dissipation : PC =30W (Tc=25°C) ; Complementary to 2SB834. Unit in mm 10.3MAX. 03.6iO2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 60 Collector-Emitter Voltage Emitter-Base Voltage v CEO 60 v EBO Collector Current ic Base Current 0.5 Collector Power Ta=25°C 1.5 Dissipation Tc=25°C 30 Junction Temperature 150 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-220AB Storage Temperature Range stg -55VL50 ELECTRICAL CHARACTERISTICS (Ta=25°C) TOSHIBA 2-10A1A Mounting kit No. AC75 Weight : 1.
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