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SSM6K781G Silicon N-Channel MOSFET

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Description

MOSFETs Silicon N-Channel MOS SSM6K781G 1.Applications * Power Management Switches 2..

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Features

* (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 17.9 mΩ (typ. ) (@VGS = 2.5 V, ID = 1.5 A) RDS(ON) = 14.4 mΩ (typ. ) (@VGS = 4.5 V, ID = 1.5 A) 3. Packaging and Pin Assignment SSM6K781G WCSP6C A1: Drain A2: Gate B1: Drain B2: Source C1: Drain C2: Source 4. Absolute Max

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Silicon N-Channel MOSFET Toshiba
Toshiba SSM6K781G-like datasheet