SSM6K781G - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 17.9 mΩ (typ. ) (@VGS = 2.5 V, ID = 1.5 A) RDS(ON) = 14.4 mΩ (typ. ) (@VGS = 4.5 V, ID = 1.5 A) 3. Packaging and Pin Assignment SSM6K781G WCSP6C A1: Drain A2: Gate B1: Drain B2: Source C1: Drain C2: Source 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 12 V Gate-source voltage VGSS ±8 Drain current (DC) (Note 1) ID.

📁 SSM6K781G Similar Datasheet

SSM6K06FU - High Speed Switching Applications (Toshiba Semiconductor)
SSM6K07FU - DC-DC Converters High Speed Switching Applications (Toshiba Semiconductor)
SSM6K08FU - CategoryTOSHIBA Field Effect Transistor (Toshiba Semiconductor)
SSM6K201FE - Power Management Switch Applications (Toshiba Semiconductor)
SSM6K202FE - Silicon N-Channel MOSFET (Toshiba Semiconductor)
SSM6K203FE - Silicon N-Channel MOSFET (Toshiba Semiconductor)
SSM6K204FE - Silicon N-Channel MOSFET (Toshiba Semiconductor)
SSM6K208FE - Silicon N-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by Toshiba

Published: Dec 15, 2023 |