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SSM6K781G Datasheet - Toshiba

SSM6K781G Silicon N-Channel MOSFET

SSM6K781G Features

* (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 17.9 mΩ (typ.) (@VGS = 2.5 V, ID = 1.5 A) RDS(ON) = 14.4 mΩ (typ.) (@VGS = 4.5 V, ID = 1.5 A) 3. Packaging and Pin Assignment SSM6K781G WCSP6C A1: Drain A2: Gate B1: Drain B2: Source C1: Drain C2: Source 4. Absolute Max

SSM6K781G Datasheet (226.16 KB)

Preview of SSM6K781G PDF

Datasheet Details

Part number:

SSM6K781G

Manufacturer:

Toshiba ↗

File Size:

226.16 KB

Description:

Silicon n-channel mosfet.

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SSM6K781G Silicon N-Channel MOSFET Toshiba

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