Description
w m INTEGRATED CIRCUIT SILICON GATE CMOS o TENTATIVE TOSHIBA MOS DIGITAL .c U × 16 BIT) CMOS NAND E2PROM 2 GBIT (256M × 8 BIT/128M 4 t .
e e h S a at .
Organization Memory cell array Register Page size Block size.
TC58NVG1S3B 2112 × 128K × 8 21.
Features
* Organization Memory cell array Register Page size Block size
* TC58NVG1S3B 2112 × 128K × 8 2112 × 8 2112 bytes (128K + 4K) bytes TC58NVG1S8B 1056 × 128K × 16 1056 × 16 1056 words (64K + 2K) words
TC58NVG1S3BFT00/TC58NVG1S8BFT00
The TC58NVG1SxB is a single 3.3 V 2 Gbit (
Applications
* such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. Modes Read, Reset, Auto Page Program, Auto Block Erase
* C Status Read Mode control Serial input/output Command control Number
