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TH58NYG3S0HBAI6 - 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM

Datasheet Summary

Description

The TH58NYG3S0HBAI6 is a single 1.8V 8Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 4096 blocks.

Features

  • Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 × 2 4352 × 8 4352 bytes (256K + 16K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 4016 blocks Max 4096 blocks.
  • Power supply VCC = 1.7V to 1.95V.
  • Access time Cell array.

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Datasheet Details

Part number TH58NYG3S0HBAI6
Manufacturer Toshiba
File Size 1.17 MB
Description 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM
Datasheet download datasheet TH58NYG3S0HBAI6 Datasheet
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TH58NYG3S0HBAI6 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NYG3S0HBAI6 is a single 1.8V 8Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 4096 blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages). The TH58NYG3S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
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