TH58NYG3S0HBAI6 - 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM

Name: TH58NYG3S0HBAI6
SKU: TH58NYG3S0HBAI6-1290250

Toshiba

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Datasheet Details

Part number	TH58NYG3S0HBAI6
Manufacturer	Toshiba
File Size	1.17 MB
Description	8-GBIT (1G x 8-BIT) CMOS NAND E2PROM
Datasheet	TH58NYG3S0HBAI6-Toshiba.pdf

TH58NYG3S0HBAI6 Product details

Description

The TH58NYG3S0HBAI6 is a single 1.8V 8Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 4096 blocks.

Features

Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 × 2 4352 × 8 4352 bytes (256K + 16K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 4016 blocks Max 4096 blocks.
Power supply VCC = 1.7V to 1.95V.
Access time Cell array.

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Published: Jul 6, 2018 |