TH58NYG3S0HBAI6 Datasheet - Toshiba

TH58NYG3S0HBAI6 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM

The TH58NYG3S0HBAI6 is a single 1.8V 8Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 4096 blocks. The device has two 4352-byte static registers which allow program and read data to be transferred betwe.

TH58NYG3S0HBAI6 Features

* Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 × 2 4352 × 8 4352 bytes (256K + 16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TH58NYG3S0HBAI6 Datasheet (1.17 MB)