Datasheet4U Logo Datasheet4U.com

TH58NYG3S0HBAI6 Datasheet - Toshiba

TH58NYG3S0HBAI6 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM

The TH58NYG3S0HBAI6 is a single 1.8V 8Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 4096 blocks. The device has two 4352-byte static registers which allow program and read data to be transferred betwe.

TH58NYG3S0HBAI6 Features

* Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 × 2 4352 × 8 4352 bytes (256K + 16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TH58NYG3S0HBAI6-Toshiba.pdf

Preview of TH58NYG3S0HBAI6 PDF
TH58NYG3S0HBAI6 Datasheet Preview Page 2 TH58NYG3S0HBAI6 Datasheet Preview Page 3

Datasheet Details

Part number:

TH58NYG3S0HBAI6

Manufacturer:

Toshiba ↗

File Size:

1.17 MB

Description:

8-gbit (1g x 8-bit) cmos nand e2prom.

TH58NYG3S0HBAI6 Distributor

📁 Related Datasheet

TH58NYG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NYG4S0FBAID 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG1S3AFT05 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)

TH58NVG2S3BTG00 4-Gbit CMOS NAND EPROM (Toshiba)

TH58NVG3D4BTG00 8 GBIT (1024M x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG3S0HBAI6 8G-BIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TH58NVG3S0HTA00 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM (Toshiba)

TAGS

TH58NYG3S0HBAI6 TH58NYG3S0HBAI6 8-GBIT 8-BIT CMOS NAND E2PROM Toshiba