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TIM1414-5L

Microwave Power GaAs FET

TIM1414-5L Features

* ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 37.5dBm at 14.0GHz to 14.5GHz ・HIGH GAIN G1dB= 6.0dB at 14.0GHz to 14.5GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1414-5L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow

TIM1414-5L Datasheet (276.06 KB)

Preview of TIM1414-5L PDF

Datasheet Details

Part number:

TIM1414-5L

Manufacturer:

Toshiba ↗

File Size:

276.06 KB

Description:

Microwave power gaas fet.

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TIM1414-5L Microwave Power GaAs FET Toshiba

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