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TK190A65Z

Silicon N-Channel MOSFET

TK190A65Z Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA) 3. Packaging and Internal Circuit TK190A65Z 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Rating

TK190A65Z Datasheet (469.05 KB)

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Datasheet Details

Part number:

TK190A65Z

Manufacturer:

Toshiba ↗

File Size:

469.05 KB

Description:

Silicon n-channel mosfet.

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TK190A65Z Silicon N-Channel MOSFET Toshiba

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