TK19H50C Silicon N-Channel MOSFET

Toshiba

Description

TK19H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK19H50C Switching Regulator Applications Low drain *source ON .

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Datasheet Specifications

Part number: TK19H50C
Manufacturer: Toshiba ↗
File Size: 346.35 KB
Datasheet: TK19H50C_Toshiba.pdf
Description: Silicon N-Channel MOSFET

Applications

* Low drain
* source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0. 25Ω (typ. ) : |Yfs| = 14 S (typ. ) Unit: mm : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Drain

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TK19H50C Silicon N-Channel MOSFET Toshiba

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