TK19H50C Datasheet - Toshiba

TK19H50C Silicon N-Channel MOSFET

TK19H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK19H50C Switching Regulator Applications Low drain source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0. 25Ω (typ.) : |Yfs| = 14 S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Drain source voltage Drain gate voltage (RGS = 20 kΩ) Gate sourc.

TK19H50C Datasheet (346.35 KB)