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TK190U65Z - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK190U65Z
Manufacturer	Toshiba ↗
File Size	484.38 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK190U65Z-Toshiba.pdf

TK190U65Z Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.149 Ω (typ. ) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA) 3. Packaging and Internal Circuit TK190U65Z TOLL 1: Gate 2: Source 2 3, 4, 5, 6, 7, 8: Source 1 9: Drain (heatsink) Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25.
unless other.

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Published: Jan 2, 2024 |