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TK190U65Z

Silicon N-Channel MOSFET

TK190U65Z Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.149 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA) 3. Packaging and Internal Circuit TK190U65Z TOLL 1: Gate 2: Source 2 3, 4, 5, 6, 7, 8: Source 1 9: Drain (he

TK190U65Z Datasheet (484.38 KB)

Preview of TK190U65Z PDF

Datasheet Details

Part number:

TK190U65Z

Manufacturer:

Toshiba ↗

File Size:

484.38 KB

Description:

Silicon n-channel mosfet.

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TK190U65Z Silicon N-Channel MOSFET Toshiba

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