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TK32A12N1 - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK32A12N1
Manufacturer	Toshiba ↗
File Size	240.54 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK32A12N1_Toshiba.pdf

TK32A12N1 Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 11.0 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK32A12N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 120 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit).

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Published: Nov 11, 2013 |