* (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TPN4R203NC Datasheet (263.23 KB)
TPN4R203NC
263.23 KB
Field effect transistor.
TPN4R203NC
MOSFETs Silicon N-channel MOS (U-MOS)
TPN4R203NC
1. Applications
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* Lithium-Ion Secondary Batteries Power Management Swi.
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