Datasheet4U.com

TPN4R712MD - Silicon P-Channel MOSFET

Toshiba

📥 Download Datasheet

TPN4R712MD Datasheet Preview — Preview of TPN4R712MD PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TPN4R712MD
Manufacturer	Toshiba
File Size	746.06 KB
Description	Silicon P-Channel MOSFET
Datasheet	TPN4R712MD-Toshiba.pdf

TPN4R712MD Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ. ) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPN4R712MD TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2019-10-30 Rev.5.0 TPN4R712MD 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise.

📁 TPN4R712MD Similar Datasheet

TPN3021 - TRIPOLAR OVERVOLTAGE PROTECTION (STMicroelectronics)
TPNA0505S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA0509S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA0512S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA0515S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA1205S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA1209S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)
TPNA1212S - 1W 3KVDC Isolated Dual Output DC/DC Converters (TOPPOWER)

Other Datasheets by Toshiba

TPN4R203NC - Field Effect Transistor
TPN4R303NL - Silicon N-channel MOSFET
TPN4R806PL - Silicon N-channel MOSFET
TPN11003NL - MOSFETs
TPN11006NL - MOSFET
TPN11006PL - Silicon N-channel MOSFET

Published: Nov 19, 2019 |