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TPN4R712MD Datasheet - Toshiba

TPN4R712MD Silicon P-Channel MOSFET

TPN4R712MD Features

* (1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPN4R712MD TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8:

TPN4R712MD Datasheet (746.06 KB)

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Datasheet Details

Part number:

TPN4R712MD

Manufacturer:

Toshiba ↗

File Size:

746.06 KB

Description:

Silicon p-channel mosfet.

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TPN4R712MD Silicon P-Channel MOSFET Toshiba

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