* (1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPN4R712MD TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8:
TPN4R712MD Datasheet (746.06 KB)
TPN4R712MD
746.06 KB
Silicon p-channel mosfet.
MOSFETs Silicon P-Channel MOS (U-MOS)
TPN4R712MD
1. Applications
* Lithium-Ion Secondary Batteries
* Power Management Switches
2. Fea.
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