TPN4R712MD Silicon P-Channel MOSFET

Toshiba

Description

MOSFETs Silicon P-Channel MOS (U-MOS) TPN4R712MD 1.Applications * Lithium-Ion Secondary Batteries * Power Management Switches 2.Fea.

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Datasheet Specifications

Part number: TPN4R712MD
Manufacturer: Toshiba ↗
File Size: 746.06 KB
Datasheet: TPN4R712MD-Toshiba.pdf
Description: Silicon P-Channel MOSFET

Features

* (1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ. ) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPN4R712MD TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8:

Applications

* Lithium-Ion Secondary Batteries

TPN4R712MD Distributors

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TPN4R712MD Silicon P-Channel MOSFET Toshiba

Toshiba TPN4R712MD-like datasheet