* (1) High-speed switching (2) Small gate charge: QSW = 3.9 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 5.1 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit
TPN4R303NL Datasheet (229.98 KB)
TPN4R303NL
229.98 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN4R303NL
1. Applications
* High-Efficiency DC-DC Converters
* Switching Voltage Regulators
.
📁 Related Datasheet
TPN4R203NC Field Effect Transistor (Toshiba)
TPN4R712MD Silicon P-Channel MOSFET (Toshiba)
TPN4R806PL Silicon N-channel MOSFET (Toshiba)
TPN11003NL MOSFETs (Toshiba)
TPN11006NL MOSFET (Toshiba)
TPN11006PL Silicon N-channel MOSFET (Toshiba)
TPN1110ENH Silicon N-channel MOSFET (Toshiba)
TPN12008QM Silicon N-Channel MOSFET (Toshiba)
TPN1200APL Silicon N-channel MOSFET (Toshiba)
TPN13008NH MOSFETs (Toshiba)
