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TPN4R303NL Datasheet - Toshiba

TPN4R303NL Silicon N-channel MOSFET

TPN4R303NL Features

* (1) High-speed switching (2) Small gate charge: QSW = 3.9 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 5.1 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit

TPN4R303NL Datasheet (229.98 KB)

Preview of TPN4R303NL PDF

Datasheet Details

Part number:

TPN4R303NL

Manufacturer:

Toshiba ↗

File Size:

229.98 KB

Description:

Silicon n-channel mosfet.

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TPN4R303NL Silicon N-channel MOSFET Toshiba

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