* (1) High-speed switching (2) Small gate charge: QSW = 9.5 nC (typ.) (3) Small output charge: Qoss = 24 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID
TPN4R806PL Datasheet (511.03 KB)
TPN4R806PL
511.03 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN4R806PL
1. Applications
* DC-DC Converters
* Switching Voltage Regulators
* Motor .
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