TPN4R806PL - Silicon N-channel MOSFET
TPN4R806PL Features
* (1) High-speed switching (2) Small gate charge: QSW = 9.5 nC (typ.) (3) Small output charge: Qoss = 24 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID
