* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 4.3 nC (typ.) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit
TPN6R003NL Datasheet (233.52 KB)
TPN6R003NL
233.52 KB
Mosfet.
TPN6R003NL
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN6R003NL
1. Applications
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* Switching Voltage Regulators DC-DC Converters
2. .
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