TPN6R303NC Datasheet - Toshiba

TPN6R303NC, MOSFET

TPN6R303NC MOSFETs Silicon N-channel MOS (U-MOS) TPN6R303NC 1.Applications * * Lithium-Ion Secondary Batteries Power Management Swi.

Features

* (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 5.2 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain

TPN6R303NC-Toshiba.pdf