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2SA1429 - Silicon PNP Epitaxial Type Transistor

2SA1429 Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1429 Power Amplifier Applications Power Switching Applications 2SA1429 Unit: mm <.

2SA1429 Applications

* Power Switching Applications 2SA1429 Unit: mm
* Low collector saturation voltage: VCE (sat) =
* 0.5 V (max) (IC =
* 1 A)
* High-speed switching: tstg = 1.0 μs (typ. )
* Complementary to 2SC3669. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Ra

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Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor
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