Datasheet Details
- Part number
- 2SD1140
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 117.15 KB
- Datasheet
- 2SD1140_ToshibaSemiconductor.pdf
- Description
- NPN TRANSISTOR
2SD1140 Description
2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1140 Micro Motor Drive, Hammer Drive Application.
2SD1140 Applications
* Switching Applications Power Amplifier Applications
Unit: mm
* High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
* Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter volt
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