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TC55NEM216ASTV55 (TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55NEM216ASTV55 Description

TC55NEM216ASTV55,70 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC .
The TC55NEM216ASTV is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.

TC55NEM216ASTV55 Features

* Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 2.7 to 5.5 V Power down features using CE Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide

TC55NEM216ASTV55 Applications

* where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of
* 40° to 85°C, the TC55NEM216ASTV can be used in environments exhibiting extreme temperature conditions. The TC55NEM216ASTV is available in a plastic 44-pin thin-small-ou

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TC55NEM216ASTV55 TC55NEM216ASTV77 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor
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