Datasheet4U Logo Datasheet4U.com

AGR18030EF Lateral MOSFET

AGR18030EF Description

AGR18030EF 30 W, 1.805 GHz *1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diff.

AGR18030EF Features

* Typical performance ratings for GSM EDGE (f = 1.840 GHz, POUT = 10 W)
* Error vector magnitude (EVM): 1.6%
* Power gain: 15 dB www. DataSheet4U. com
* Drain efficiency: 30%
* Modulation spectrum: @ ±400 kHz =
* 64 dBc. @ ±600 kHz =
* 71 dBc. Typical contin

AGR18030EF Applications

* This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industrystandard package and is capable of delivering a minimum output power of 30 W, which makes it ideally suited for today’s RF power amplifier applications. Ta

📥 Download Datasheet

Preview of AGR18030EF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • AGR09045E - Lateral MOSFET (PEAK electronics)
  • AGR21010E - N-Channel E-Mode Lateral MOSFET (Agere Systems)
  • AGRF1000 - POLYSWITCH (Tyco Electronics)
  • AGRF1100 - POLYSWITCH (Tyco Electronics)
  • AGRF1200 - POLYSWITCH (Tyco Electronics)
  • AGRF1400 - POLYSWITCH (Tyco Electronics)
  • AGRF400 - POLYSWITCH (Tyco Electronics)
  • AGRF500 - POLYSWITCH (Tyco Electronics)

📌 All Tags

Lateral MOSFET TriQuint Semiconductor
TriQuint Semiconductor AGR18030EF-like datasheet