Datasheet Details
- Part number
- AGR18060E
- Manufacturer
- TriQuint Semiconductor
- File Size
- 437.04 KB
- Datasheet
- AGR18060E_TriQuintSemiconductor.pdf
- Description
- Lateral MOSFET
AGR18060E Description
AGR18060E 60 W, 1805 MHz *1880 MHz, LDMOS RF Power Transistor Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxi.AGR18060E Features
* Typical EDGE performance: 1880 MHz, 26 V, IDQ = 500 mAAGR18060E Applications
* It is packaged in an industry-standard package and is capable of delivering a minimum output power of 60 W, which makes it ideally suited for today’s wireless base station RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR18060EU AG
📁 Related Datasheet
📌 All Tags