Datasheet4U Logo Datasheet4U.com

AGR19060E Transistor

AGR19060E Description

AGR19060E 60 W, 1930 MHz *1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal.

AGR19060E Features

* Typical performance over entire GSM band:
* P1dB: 60 W typical.
* Continuous wave (CW) power gain: @ P1dB = 14.5 dB.
* CW efficiency @ P1dB = 53% typical.
* Return loss:
* 12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot

📥 Download Datasheet

Preview of AGR19060E PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • AGR09045E - Lateral MOSFET (PEAK electronics)
  • AGR21010E - N-Channel E-Mode Lateral MOSFET (Agere Systems)
  • AGRF1000 - POLYSWITCH (Tyco Electronics)
  • AGRF1100 - POLYSWITCH (Tyco Electronics)
  • AGRF1200 - POLYSWITCH (Tyco Electronics)
  • AGRF1400 - POLYSWITCH (Tyco Electronics)
  • AGRF400 - POLYSWITCH (Tyco Electronics)
  • AGRF500 - POLYSWITCH (Tyco Electronics)

📌 All Tags

TriQuint Semiconductor AGR19060E-like datasheet