TSF13N50M - N-Channel MOSFET

Truesemi

Datasheet Details

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

13A,500V,Max. RDS(on)=0.48 Ω @ VGS =10V.
Low gate charge(typical 45nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanc.

📁 Similar Datasheet

TSF130D38A-S6 - Saw Filters (Token)
TSF130D38B-S7 - Saw Filters (Token)
TSF139D00-D2 - Saw Filters (Token)
TSF10H100C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10H120C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10H150C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10H200C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10N60C - 600V Insulated N-Channel Type Power MOSFET (Thinki Semiconductor)

Truesemi TSF13N50M-similar datasheet