TSF18N50M

N-Channel MOSFET

Truesemi

TSF18N50M Features

* 18.0A,500V,Max.RDS(on)=0.30 Ω @ VGS =10V

* Low gate charge(typical 50nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA

TSF18N50M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF18N50M Datasheet (636.81 KB)

TSF18N50M Datasheet Preview — Preview of TSF18N50M PDF

Datasheet Details

Part number:

TSF18N50M

Manufacturer:

Truesemi

File Size:

636.81 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TSF18N50MR N-Channel MOSFET (Truesemi)

TSF18N20M N-Channel MOSFET (Truesemi)

TSF18N60MR N-Channel MOSFET (Truesemi)

TSF1842D50-S9 Saw Filters (Token)

TSF1855D00-S9 Saw Filters (Token)

TSF10H100C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H120C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H150C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H200C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10N60C 600V Insulated N-Channel Type Power MOSFET (Thinki Semiconductor)

TAGS

TSF18N50M N-Channel MOSFET Truesemi

Image Gallery

TSF18N50M Features

TSF18N50M General Description

Datasheet Details

File Size:

Description:

TSF18N50M Distributor