TSF18N50MR

N-Channel MOSFET

Truesemi

TSF18N50MR Features

* 18.0A,500V,Max.RDS(on)=0.31 Ω @ VGS =10V

* Low gate charge(typical 45nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA

TSF18N50MR General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF18N50MR Datasheet (393.10 KB)

TSF18N50MR Datasheet Preview — Preview of TSF18N50MR PDF

Datasheet Details

Part number:

TSF18N50MR

Manufacturer:

Truesemi

File Size:

393.10 KB

Description:

N-channel mosfet.

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TSF18N50MR N-Channel MOSFET Truesemi

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TSF18N50MR Features

TSF18N50MR General Description

Datasheet Details

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