TSF18N60MR

N-Channel MOSFET

Truesemi

TSF18N60MR Features

* 18A,600V,Max.RDS(on)=0.38 Ω @ VGS =10V

* Low gate charge(typical 57nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSF18N60MR General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF18N60MR Datasheet (388.06 KB)

TSF18N60MR Datasheet Preview — Preview of TSF18N60MR PDF

Datasheet Details

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TSF18N60MR

Manufacturer:

Truesemi

File Size:

388.06 KB

Description:

N-channel mosfet.

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TSF18N60MR N-Channel MOSFET Truesemi

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TSF18N60MR Features

TSF18N60MR General Description

Datasheet Details

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