PH1113-100 Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty

Tyco Electronics

Description

Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty PH1113-100 PH1113-100 Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 .
M/A-COM’s PH1113-100 is a silicon bipolar NPN power transistor intended for use in L-band 1.

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Datasheet Specifications

Part number: PH1113-100
Manufacturer: Tyco Electronics
File Size: 62.31 KB
Datasheet: PH1113-100_TycoElectronics.pdf
Description: Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty

Features

* NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Outpu

Applications

* the PH1113-100 can produce 25 watts of output power with short pulse length (3µS) at 30 percent duty cycle. The transistor is housed in a 2-lead rectangular metal-ceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metaliza

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PH1113-100 Radar Pulsed Power Transistor 100 Watts 1.1-1.3 GHz 3ms Pulse 30 % Duty Tyco Electronics

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