QM12N65B

N-Ch 650V Fast Switching MOSFETs

UBIQ

QM12N65B Features

* z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 650V RDSON 0.8Ω ID 12A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter TO263 Pin Configuration D Absol

QM12N65B General Description

The QM12N65B is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter and lighting applications . The QM12N65B meet the RoHS and Green Product requirement , 100% EAS guaranteed with full func.

QM12N65B Datasheet (332.66 KB)

QM12N65B Datasheet Preview — Preview of QM12N65B PDF

Datasheet Details

Part number:

QM12N65B

Manufacturer:

UBIQ

File Size:

332.66 KB

Description:

N-ch 650v fast switching mosfets.

📁 Related Datasheet

QM12N65F N-Ch 650V Fast Switching MOSFETs (UBIQ)

QM12N65P N-Ch 650V Fast Switching MOSFET (UBIQ)

QM12N70F N-Ch 700V Fast Switching MOSFET (UBIQ)

QM1000HA-24B HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM100CY-H HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM100DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM100DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE (Mitsubishi Electric Semiconductor)

TAGS

QM12N65B N-Ch 650V Fast Switching MOSFETs UBIQ

Image Gallery

QM12N65B Features

QM12N65B General Description

Datasheet Details

File Size:

Description:

QM12N65B Distributor