P5015BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 50mΩ @VGS = 10V 18A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID 18 11 IDM 80 Avalanche Current IAS 20 Avalanche Energy L = 0.1mH EAS 20 Power Dissipation TC = 25 °C TC = 100 °C PD 41 16.