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CHA2291 Datasheet - United Monolithic Semiconductors

CHA2291, 10-18GHz Low Noise / Variable Gain Amplifier

CHA2291 RoHS COMPLIANT 10-18GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC .
The CHA2291 is a high gain four-stage monolithic low noise amplifier with variable gain.
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CHA2291_UnitedMonolithicSemiconductors.pdf

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Datasheet Details

Part number:

CHA2291

Manufacturer:

United Monolithic Semiconductors

File Size:

408.81 KB

Description:

10-18GHz Low Noise / Variable Gain Amplifier

Features

* Frequency range: 10-18GHz 2.2dB Noise Figure. 23dB gain Gain control range: 25dB DC power consumption: 180mA @ 5V Chip size: 2.49 X 1.23 X 0.10 mm 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 Gain (dB) NF (dB) 11 12 13 14 15 16 17 Frequency (GHz) Typical on wafer measurements : Gain & NF 18 Main Ch

Applications

* from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

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