Datasheet Details
- Part number
- CHA2291
- Manufacturer
- United Monolithic Semiconductors
- File Size
- 408.81 KB
- Datasheet
- CHA2291_UnitedMonolithicSemiconductors.pdf
- Description
- 10-18GHz Low Noise / Variable Gain Amplifier
CHA2291 Description
CHA2291 RoHS COMPLIANT 10-18GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC .
The CHA2291 is a high gain four-stage monolithic low noise amplifier with variable gain.
CHA2291 Features
* Frequency range: 10-18GHz 2.2dB Noise Figure. 23dB gain Gain control range: 25dB DC power consumption: 180mA @ 5V Chip size: 2.49 X 1.23 X 0.10 mm
26 24 22 20 18 16 14 12 10
8 6 4 2 0
10
Gain (dB)
NF (dB)
11 12 13 14 15 16 17 Frequency (GHz)
Typical on wafer measurements : Gain & NF
18
Main Ch
CHA2291 Applications
* from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
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