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CHA7012 X-band HBT High Power Amplifier

CHA7012 Description

CHA7012 X-band HBT High Power Amplifier GaAs Monolithic Microwave IC .
The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed www.

CHA7012 Features

* Frequency band : 9.2 -10.4GHz Output power (P3dB ): 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface -VAnalog control thanks to biasing circuit Chip size: 5.00 x 3.68 x 0.1mm Pout (dBm @ 3dBc Linear Gain (Pin=0dBm) 24 20 1 6 9 9.2 9.4

CHA7012 Applications

* This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: -th

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X-band HBT High Power Amplifier United Monolithic Semiconductors
United Monolithic Semiconductors CHA7012-like datasheet