SI4850DY-T1 N-Channel 60V MOSFET

VBsemi

Description

SI4850DY-T1-VB SI4850DY-T1-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 0.025 at VGS = 10 V 0.

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Datasheet Specifications

Part number: SI4850DY-T1
Manufacturer: VBsemi
File Size: 219.47 KB
Datasheet: SI4850DY-T1-VBsemi.pdf
Description: N-Channel 60V MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* Trench Power MOSFET
* Optimized for “Low Side” Synchronous Rectifier Operation

Applications

* CCFL Inverter ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain D

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SI4850DY-T1 N-Channel 60V MOSFET VBsemi

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