SI4856ADY-T1-E3 N-Channel 30V MOSFET

VBsemi

Description

SI4856ADY-T1-E3-VB SI4856ADY-T1-E3-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.004 at VGS =.

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Datasheet Specifications

Part number: SI4856ADY-T1-E3
Manufacturer: VBsemi
File Size: 183.98 KB
Datasheet: SI4856ADY-T1-E3-VBsemi.pdf
Description: N-Channel 30V MOSFET

Features

* Halogen-free
* Trench Power MOSFET
* Optimized for High-Side Synchronous Rectifier Operation
* 100 % Rg Tested

Applications

* Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ± 20 V TC = 25 °C 18 Continuous Drain Current (TJ = 150 °C) TC =

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SI4856ADY-T1-E3 N-Channel 30V MOSFET VBsemi

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