SI4856ADY-T1-E3 N-Channel 30V MOSFET

VBsemi

Description

SI4856ADY-T1-E3-VB SI4856ADY-T1-E3-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.004 at VGS =.

📥 Download Datasheet

SI4856ADY-T1-E3 Datasheet Preview — Preview of SI4856ADY-T1-E3 PDF

Datasheet Specifications

Part number: SI4856ADY-T1-E3
Manufacturer: VBsemi
File Size: 183.98 KB
Datasheet: SI4856ADY-T1-E3-VBsemi.pdf
Description: N-Channel 30V MOSFET

Features

* Halogen-free
* Trench Power MOSFET
* Optimized for High-Side Synchronous Rectifier Operation
* 100 % Rg Tested

Applications

* Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ± 20 V TC = 25 °C 18 Continuous Drain Current (TJ = 150 °C) TC =

SI4856ADY-T1-E3 Distributors

📁 Related Datasheet

Si4856DY - N-Channel 30-V MOSFET (Vishay Siliconix)
Si4850BDY - N-Channel 60V (D-S) MOSFET (Vishay)
Si4850EY - N-Channel MOSFET (Vishay)
Si4852DY - N-Channel 30-V (D-S) MOSFET (Vishay)
SI4858DY - N-Channel MOSFET (Vishay Siliconix)
SI4800 - N-channel FET (NXP)

📌 All Tags

N-Channel 30V MOSFET VBsemi

VBsemi SI4856ADY-T1-E3-like datasheet