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2N2920U - NPN Dual Silicon Transistor

This page provides the datasheet information for the 2N2920U, a member of the 2N2919 NPN Dual Silicon Transistor family.

Datasheet Summary

Features

  • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/355.
  • TO-78 and U package types.
  • Radiation Tolerant Levels M, D, P, L, and R Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Collector - Base Cutoff Current Test Conditions VCB = 70 V dc Symbol Units Min. ICBO1 µA dc.
  • Max. 10 Emitter - Base Cutoff Current Breakdown Voltage, Collector-Emitter VEB = 6 V dc IC = 10 mA dc IEBO1 µA dc.
  • 10 V(BR)C.

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Datasheet preview – 2N2920U

Datasheet Details

Part number 2N2920U
Manufacturer VPT
File Size 511.21 KB
Description NPN Dual Silicon Transistor
Datasheet download datasheet 2N2920U Datasheet
Additional preview pages of the 2N2920U datasheet.

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Full PDF Text Transcription

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2N2919, 2N2919L, 2N2919U 2N2920, 2N2920L, 2N2920U NPN Dual Silicon Transistors Features • Available in JAN, JANTX, JANTXV, JANS and JANSR per MIL-PRF19500/355 • TO-78 and U package types • Radiation Tolerant Levels M, D, P, L, and R Rev. V1 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Collector - Base Cutoff Current Test Conditions VCB = 70 V dc Symbol Units Min. ICBO1 µA dc — Max.
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