RFLW3N3900C - High Frequency Wire Bondable RF Spiral Inductor

Vishay

RFLW3N3900C Datasheet Preview — Preview of RFLW3N3900C PDF

Datasheet Details

Part number	RFLW3N3900C
Manufacturer	Vishay ↗
File Size	377.10 KB
Description	High Frequency Wire Bondable RF Spiral Inductor
Datasheet	RFLW3N3900C-Vishay.pdf

RFLW3N3900C Product details

Description

RFLW 30 x 30 NO PASS 20 nH 20 % WS R F LW3 N 2 0 0 0 BMNWS MODEL SIZE PASSIVATION RFLW 3 = 30 x 30 5 = 50 x 50 N = none INDUCTANCE (nH) First 4 digits are significant figures of capacitance INDUCTANCE MULTIPLIER CODE C = 0.001 B = 0.01 A = 0.1 TOLERANCE CODE M = 20 % L = 25 % SPECIAL N = none PACKAGING CODE WAFFLE WS = 100 min., 1 mult.EQUIVALENT CIRCUIT The inductor’s spiral trace presents a substantial amount of series resistance, and the close spacing of spiral turns pr

Features

High frequency.
Wire bond assembly.
Small size: 0.030" x 0.030" x 0.020".
Low DCR, high Q.
Low parasitic capacitance, high SRF.
Equivalent circuit model enclosed.
S parameter files available for download.
Sample kit available.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 RFLW3N3900C Similar Datasheet

RFL1N08 - N-Channel Power MOSFET (Intersil Corporation)
RFL1N10 - N-Channel Power MOSFET (Intersil Corporation)
RFL1N10L - N-Channel Power MOSFET (Intersil Corporation)
RFL1N12 - N-Channel Power MOSFET (Intersil Corporation)
RFL1N12L - N-Channel Power MOSFET (Intersil Corporation)
RFL1N15 - N-Channel Power MOSFET (Intersil Corporation)
RFL1N15L - N-Channel Power MOSFET (Intersil Corporation)
RFL1N18 - N-Channel Power MOSFET (Intersil Corporation)

Other Datasheets by Vishay

RFLW3N3000B - High Frequency Wire Bondable RF Spiral Inductor
RFLW3N1100B - High Frequency Wire Bondable RF Spiral Inductor
RFLW3N2000B - High Frequency Wire Bondable RF Spiral Inductor
RFLW3N6700C - High Frequency Wire Bondable RF Spiral Inductor
RFLW3N9000C - High Frequency Wire Bondable RF Spiral Inductor

Published: Aug 11, 2025 |