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SI8499DB P-Channel MOSFET

SI8499DB Description

www.vishay.com Si8499DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) () 0.032 at VGS = -4.5 V 0.046 at VGS =.

SI8499DB Features

* TrenchFET® power MOSFET
* Ultra-small 1.5 mm x 1 mm maximum outline
* Ultra-thin 0.59 mm maximum height

SI8499DB Applications

* S
* Low on-resistance load switch, charger switch and battery switch for portable devices G - Low power consumption - Increased battery life D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Volta

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P-Channel MOSFET Vishay
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