V60M120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V60M120C-M3, V60M120CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V a.

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Datasheet Specifications

Part number: V60M120C-M3
Manufacturer: Vishay ↗
File Size: 123.89 KB
Datasheet: V60M120C-M3-Vishay.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: for definitions of compliance please see www. visha

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A (TA = 125 °C) TJ max. Package 2 x 30 A 120 V 300 A 0.69 V 175 °C TO-220AB Diode variations Dual commo

V60M120C-M3 Distributors

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay V60M120C-M3-like datasheet