Description
www.vishay.com V60M120C-M3, V60M120CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V a.
Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: for definitions of compliance
please see www. visha
Applications
* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A (TA = 125 °C) TJ max. Package
2 x 30 A 120 V 300 A 0.69 V 175 °C
TO-220AB
Diode variations
Dual commo
