V60M120CHM3 Datasheet - Vishay

V60M120CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V60M120CHM3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* AEC-Q101 qualified

* Material categorization: for definitions of compliance please see www.visha

Datasheet Details

V60M120CHM3

123.89 KB

Dual high-voltage trench mos barrier schottky rectifier.

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