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VBT1080C-M3 Dual Trench MOS Barrier Schottky Rectifier

VBT1080C-M3 Description

www.vishay.com VBT1080C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A TMBS ® TO-263A.

VBT1080C-M3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912

VBT1080C-M3 Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM VF at IF = 5 A TJ max. Diode variation 2x5A 80 V 80 A 0.57 V 150 °C Common cathode MECH

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Datasheet Details

Part number
VBT1080C-M3
Manufacturer
Vishay ↗
File Size
84.89 KB
Datasheet
VBT1080C-M3-Vishay.pdf
Description
Dual Trench MOS Barrier Schottky Rectifier

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Dual Trench MOS Barrier Schottky Rectifier Vishay
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