Part number:
VBT1080S-E3
Manufacturer:
File Size:
144.44 KB
Description:
Trench mos barrier schottky rectifier
VBT1080S-E3 Datasheet (144.44 KB)
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductors | VBT1080S-E3-4W | DIODE SCHOTTKY 80V 10A TO263AB | DigiKey | 0 | 8000 units |
$0.35
|
🛒 Buy Now |
VBT1080S-E3 Datasheet (144.44 KB)
VBT1080S-E3
144.44 KB
Trench mos barrier schottky rectifier
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
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