VBT1080S-E3 Datasheet - Vishay

VBT1080S-E3 Trench MOS Barrier Schottky Rectifier

VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT1080S 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VFT1080S PIN 1 PIN 2 PIN 3 TO-262AA K A NC VBT1080S NC K A HEATSINK VIT1080S 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 10 A 80 V 100 A 0.60 V 150 °C TO-220AB, ITO-220AB,.

VBT1080S-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

VBT1080S-E3 Datasheet (144.44 KB)