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VBT1545CBP Trench MOS Barrier Schottky Rectifier

VBT1545CBP Description

VBT1545CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41.

VBT1545CBP Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per LF maximum peak of 245 °C 2 K J-STD-020,

VBT1545CBP Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 7.5 A TOP max. (AC mode) TJ max. (DC forward current) 2 x 7.5 A 45 V 100 A 0.49 V 150 °C 200 °C MECHANICAL DATA Case: TO-263AB Mol

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Datasheet Details

Part number
VBT1545CBP
Manufacturer
Vishay ↗
File Size
145.88 KB
Datasheet
VBT1545CBP_Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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