* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per LF maximum peak of 245 °C 2 K J-STD-020,
* TJ 200 °C max. in solar bypass mode application
* Material categorization:
VBT1545CBP Datasheet (145.88 KB)
VBT1545CBP
145.88 KB
Trench mos barrier schottky rectifier.
VBT1545CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41.
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