VBT1545CBP-E3 Datasheet (Vishay) - Trench MOS Barrier Schottky Rectifier

VBT1545CBP-E3, Trench MOS Barrier Schottky Rectifier

www.vishay.com VBT1545CBP-E3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 VBT1545CBP PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 7.5 A TOP max.

(AC mode) TJ max.

(DC forward current) Package 2 x 7.5 A 45 V 100 A 0.49 V 150 °C 200 °C D2PAK (TO-263AB) Circuit configurat

VBT1545CBP-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

* TJ 200 °C max. in solar bypass mode application

* Material categorization: for def