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VBT2080S-M3 Trench MOS Barrier Schottky Rectifier

VBT2080S-M3 Description

www.vishay.com VBT2080S-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® D2PAK (TO-26.

VBT2080S-M3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912

VBT2080S-M3 Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 20 A 80 V 150 A 0.70 V 150 °C D2PAK (TO-263AB) Circuit c

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Datasheet Details

Part number
VBT2080S-M3
Manufacturer
Vishay ↗
File Size
99.52 KB
Datasheet
VBT2080S-M3-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
Vishay VBT2080S-M3-like datasheet