* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
VBT2080S-M3 Datasheet (99.52 KB)
VBT2080S-M3
99.52 KB
Trench mos barrier schottky rectifier.
www.vishay.com
VBT2080S-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
TMBS ®
D2PAK (TO-26.
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