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VBT30L60C Dual Trench MOS Barrier Schottky Rectifier

VBT30L60C Description

www.vishay.com VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A TMBS ® D2PAK (.

VBT30L60C Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available
* Not recommended for PCB bottom side wave mounting
* Material cate

VBT30L60C Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-

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Datasheet Details

Part number
VBT30L60C
Manufacturer
Vishay ↗
File Size
96.89 KB
Datasheet
VBT30L60C_Vishay.pdf
Description
Dual Trench MOS Barrier Schottky Rectifier

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Dual Trench MOS Barrier Schottky Rectifier Vishay
Vishay VBT30L60C-like datasheet