Datasheet4U Logo Datasheet4U.com

VFT5200-E3

Trench MOS Barrier Schottky Rectifier

VFT5200-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-22

VFT5200-E3 Datasheet (192.42 KB)

Preview of VFT5200-E3 PDF

Datasheet Details

Part number:

VFT5200-E3

Manufacturer:

Vishay ↗

File Size:

192.42 KB

Description:

Trench mos barrier schottky rectifier.
VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58.

📁 Related Datasheet

VFT5200 - Trench MOS Barrier Schottky Rectifier (Vishay)
.DataSheet.co.kr New Product VT5200, VFT5200, VBT5200, VIT5200 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF =.

VFT5202-M3 - Trench MOS Barrier Schottky Rectifier (Vishay)
VT5202-M3, VFT5202-M3 VBT5202-M3, VIT5202-M3 .vishay. Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 .

VFT5-28 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT5-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI VFT5-28 is a N-Channel Enhancement-Mode RF Power MOSFET Designed for AM and .

VFT5-28SL - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT5-28SL VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT5-28SL is Designed for Class A and AB VHF Power Amplifiers operating at fre.

VFT10200C - Trench MOS Barrier Schottky Rectifier (Vishay)
.DataSheet.co.kr New Product VT10200C, VFT10200C, VBT10200C, VIT10200C Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra .

VFT10200C-E3 - Trench MOS Barrier Schottky Rectifier (Vishay)
VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 .vishay. Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low V.

VFT1045BP - Trench MOS Barrier Schottky Rectifier (Vishay)
VFT1045BP .vishay. Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 .

VFT1045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
New Product VFT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® .

TAGS

VFT5200-E3 Trench MOS Barrier Schottky Rectifier Vishay

Image Gallery

VFT5200-E3 Datasheet Preview Page 2 VFT5200-E3 Datasheet Preview Page 3

VFT5200-E3 Distributor