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VFT5200-E3 Trench MOS Barrier Schottky Rectifier

VFT5200-E3 Description

VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58.

VFT5200-E3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-22

VFT5200-E3 Applications

* For use in high frequency converters, switching power su

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Datasheet Details

Part number
VFT5200-E3
Manufacturer
Vishay ↗
File Size
192.42 KB
Datasheet
VFT5200-E3-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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